The Effect of High-Resistance SnO2 on CdS/CdTe Device Performance
Conference
·
OSTI ID:7100
In this paper, we have studied the effect of high-resistance SnO2 buffer layers, deposited by low-pressure chemical-vapor deposition, on CdS/CdTe device performance. Our results indicate that when CdS/CdTe devices have a very thin layer of CdS or no CdS at all, the i-SnO2 buffer layer helps to increase device efficiency. When the CdS layer is thicker than 600{angstrom}, the device performance is dominated by CdS thickness, not the i-SnO2 layer. If a very thin CdS layer is to be used to enhance device performance, we conclude that a better SnO2 buffer layer is needed.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 7100
- Report Number(s):
- NREL/CP-520-25607; ON: DE00007100
- Country of Publication:
- United States
- Language:
- English
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