Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Applications of Cd{sub 2}SnO{sub 4} transparent conducting oxides in CdS/CdTe thin-film devices

Conference ·
OSTI ID:675964

An unusual processing scheme has been developed for preparing single- phase cadmium stannate (Cd{sub 2}SnO{sub 4} or CTO) films. Cd{sub 2}SnO{sub 4} transparent conducting oxide (TCO) films have several significant advantages over conventional TCOs when applied to CdS/CdTe thin-film devices. They are more conductive, more transparent, have lower surface roughness, are patternable, and are exceptionally stable. Cd{sub 2}SnO{sub 4}-based CdS/CdTe polycrystalline thin-film solar cells with efficiencies of 14% have been fabricated. Preliminary cell results have demonstrated that device performance can be enhanced by replacing the SnO{sub 2} layer with a Cd{sub 2}SnO{sub 4} TCO film.

Research Organization:
National Renewable Energy Lab., Golden, CO (United States)
DOE Contract Number:
AC36-83CH10093
OSTI ID:
675964
Report Number(s):
AD-A--351013/XAB; CONF-970953--; NREL/CP--520-22941
Country of Publication:
United States
Language:
English

Similar Records

CdS/CdTe thin-film devices using a Cd{sub 2}SnO{sub 4} transparent conducting oxide
Journal Article · Fri Jan 31 23:00:00 EST 1997 · AIP Conference Proceedings · OSTI ID:552869

CdS/CdTe thin-film solar cell with a zinc stannate buffer layer
Journal Article · Sun Feb 28 23:00:00 EST 1999 · AIP Conference Proceedings · OSTI ID:355359

CdS/CdTe Thin-Film Solar Cell with a Zinc Stannate Buffer Layer
Conference · Tue Oct 27 23:00:00 EST 1998 · OSTI ID:6608