Degradation mechanisms studies in CdS/CdTe solar cells with ZnTe:Cu/Au back contact

Journal Article · Mon Mar 01 00:00:00 EST 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.57899· OSTI ID:355374

Morgan, D; Tang, J; Kaydanov, V; Ohno, T R; Trefny, J U ^[1]

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1. Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States)

CdS/CdTe/ZnTe:Cu/Au solar cells were fabricated and tested under stressed conditions including enhanced temperature, forward and reverse bias, open circuit, dark and light. Discussion of results was focused mostly on the development of the back contact Schottky diode (increase in series resistance). Changes in the cell parameters were detected based on the analysis of the dynamic resistance of a cell (dV/dJ) at forward biases. A possible role of electromigration of the Cu dopant was discussed. {copyright} {ital 1999 American Institute of Physics.}

• Sponsoring Organization: USDOE
• OSTI ID: 355374
• Report Number(s): CONF-980935-; ISSN 0094-243X; TRN: 9915M0033
• Journal Information: AIP Conference Proceedings, Vol. 462, Issue 1; Conference: 15. National Center for Photovoltaics program review conference, Denver, CO (United States), 9-11 Sep 1998; Other Information: PBD: Mar 1999
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CADMIUM COMPOUNDS
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
ELECTROPHORESIS
SOLAR CELLS
CADMIUM SULFIDES
CADMIUM TELLURIDES
ZINC TELLURIDES
GOLD
ELECTRIC CONTACTS
SCHOTTKY BARRIER DIODES
PERFORMANCE TESTING
THERMAL DEGRADATION
EFFICIENCY