Degradation mechanisms studies in CdS/CdTe solar cells with ZnTe:Cu/Au back contact

Journal Article · Mon Mar 01 04:00:00 EST 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.57899· OSTI ID:355374

Morgan, D; Tang, J; Kaydanov, V; Ohno, T R; Trefny, J U ^[1]

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1. Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States)

CdS/CdTe/ZnTe:Cu/Au solar cells were fabricated and tested under stressed conditions including enhanced temperature, forward and reverse bias, open circuit, dark and light. Discussion of results was focused mostly on the development of the back contact Schottky diode (increase in series resistance). Changes in the cell parameters were detected based on the analysis of the dynamic resistance of a cell (dV/dJ) at forward biases. A possible role of electromigration of the Cu dopant was discussed. {copyright} {ital 1999 American Institute of Physics.}

• Sponsoring Organization: USDOE
• OSTI ID: 355374
• Report Number(s): CONF-980935--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CADMIUM TELLURIDES
EFFICIENCY
ELECTRIC CONTACTS
ELECTROPHORESIS
GOLD
PERFORMANCE TESTING
SCHOTTKY BARRIER DIODES
SOLAR CELLS
TELLURIUM COMPOUNDS
THERMAL DEGRADATION
ZINC COMPOUNDS
ZINC TELLURIDES