Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices
We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of {approx}360 C. At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320 C. C-V analysis indicates that a ZnTe:Cu layer thickness of < {approx}0.5 mum does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1mum) yields the highest CdTe net acceptor concentration, lowest value of J{sub o}, and highest V{sub oc}. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 943992
- Country of Publication:
- United States
- Language:
- English
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