Dependence of Carrier Lifetime on Cu-Contacting Temperature and ZnTe:CU Thickness in CdS/CdTe Thin Film Solar Cells
Cu diffusion from a ZnTe:Cu contact interface can increase the net acceptor concentration in the CdTe layer of a CdS/CdTe photovoltaic solar cell. This reduces the space-charge width (W{sub d}) of the junction and enhances current collection and open-circuit voltage. Here we study the effect of Cu concentration in the CdTe layer on carrier lifetime ({tau}) using time-resolved photoluminescence measurements of ZnTe:Cu/Ti-contacted CdTe devices. Measurements show that if the ZnTe:Cu layer thickness remains constant and contact temperature is varied, {tau} increases significantly above its as-deposited value when the contacting temperature is in a range that has been shown to yield high-performance devices ({approx} 280 to {approx} 320 C). However, when the contacting temperature is maintained near an optimum value and the ZnTe:Cu thickness is varied, {tau} decreases with ZnTe:Cu thickness.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 950136
- Journal Information:
- Thin Solid Films, Journal Name: Thin Solid Films Journal Issue: 7, 2 February 2009 Vol. 517; ISSN THSFAP; ISSN 0040-6090
- Country of Publication:
- United States
- Language:
- English
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