The shape of self-assembled InAs islands grown by molecular beam epitaxy
- Univ. of Oregon, Eugene, OR (United States)
- National Renewable Energy Lab., Golden, CO (United States)
The authors have determined the shape of InAs quantum dots using reflection high energy electron diffraction. The results indicate that self-assembled InAs islands possess a pyramidal shape with {l_brace}136{r_brace} bounding facets. This shape is characterized by C{sub 2{upsilon}} symmetry and a parallelogram base, which is elongated along the [1{bar 1}0] direction. Cross-sectional transmission electron microscopy images taken along the [110] and [1{bar 1}0] directions as well as atomic force microscopy images strongly support the {l_brace}136{r_brace} shape. Furthermore, polarization-resolved photoluminescence spectra show strong in-plane anisotropy, with emission predominantly polarized along the [1{bar 1}0] direction, consistent with the proposed quantum dot shape.
- OSTI ID:
- 353456
- Journal Information:
- Journal of Electronic Materials, Vol. 28, Issue 5; Other Information: PBD: May 1999
- Country of Publication:
- United States
- Language:
- English
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