Electronic structure of self-organized InAs/GaAs quantum dots bounded by {l_brace}136{r_brace} facets
- Department of Physics, University of Oregon, Eugene, Oregon 97403 (United States)
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Recent experiments indicate that the shape of self-organized InAs quantum dots grown on GaAs [001] is an elongated pyramid with bounding facets corresponding to a family of four {l_brace}136{r_brace} planes. This structure, which possesses C{sub 2v} symmetry, is quite different from square-base pyramidal or lens geometries, which have been assumed in previous electronic structure calculations for this system. In this paper, we consider theoretically the influence of the {l_brace}136{r_brace} shape on the electronic structure and optical properties of the quantum dots. We present a valence force-field calculation of the inhomogeneous strain and incorporate the results into an eight band k(vector sign){center_dot}p(vector sign) electronic structure calculation. The size dependence of the electronic structure is calculated and compared to experimental photoluminescence spectra. The effects of perturbations on the {l_brace}136{r_brace} shape are also considered. Calculations based on the {l_brace}136{r_brace} shape give good agreement with the observed level structure and optical polarization properties of self-organized InAs/GaAs quantum dots. (c) 2000 The American Physical Society.
- OSTI ID:
- 20215324
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 4 Vol. 61; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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