Comparison of the electronic structure of InAs/GaAs pyramidal quantum dots with different facet orientations

Journal Article · Wed Apr 01 04:00:00 EST 1998 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.57.R9408· OSTI ID:600997

Kim, J; Wang, L; Zunger, A ^[1]

---

1. National Renewable Energy Laboratory, Golden , Colorado 80401 (United States)

Using a pseudopotential plane-wave approach, we have calculated the electronic structure of strained InAs pyramidal quantum dots embedded in a GaAs matrix, for a few height (h)-to-base(b) ratios, corresponding to different facet orientations {l_brace}101{r_brace}, {l_brace}113{r_brace}, and {l_brace}105{r_brace}. We find that the dot shape (not just size) has a significant effect on its electronic structure. In particular, while the binding energies of the ground electron and hole states increase with the pyramid {ital volumes} (b{sup 2}h), the splitting of the p-like conduction states increases with facet {ital orientation} (h/b), and the p-to-s splitting of the conduction states decreases as the {ital base size} (b) increases. We also find that there are up to six bound electron states (12 counting the spin), and that all degeneracies other than spin, are removed. This is in accord with the conclusion of electron-addition capacitance data, but in contrast with simple {bold k}{center_dot}{bold p} calculations, which predict only a single electron level. {copyright} {ital 1998} {ital The American Physical Society}

• OSTI ID: 600997
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 16 Vol. 57; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
BAND THEORY
BINDING ENERGY
CRYSTALS
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
STRAINS
SURFACES