Size, shape, and ordering of SiGe/Si(001) islands grown by means of liquid phase epitaxy under far-nonequilibrium growth conditions
- Martin-Luther-Universitaet Halle-Wittenberg, Fachbereich Physik, Hoher Weg 8, D-06120 Halle (Germany)
Applying scanning electron microscopy, we have studied the evolution of shape and lateral positional correlation of Si{sub 1-x}Ge{sub x}/Si(001) Stranski-Krastanov islands grown by means of liquid phase epitaxy (LPE). However, in contrast to conventional near-equilibrium LPE, a distinctly higher cooling rate of 10 K/min ensures extremly nonequilibrium growth conditions. The facet inclination of subsequent island stages decreases from nearly vertical sidewalls toward {l_brace}111{r_brace}- and {l_brace}101{r_brace}-type facets. Energy dispersive x-ray microanalysis yields a size-independent germanium content of 8.9% within islands between 760 and 1700 nm base width which is--by more than a factor of 2--smaller than islands of the same concentration grown in a near-equilibrium LPE process. Square-like formations of subsequently smaller islands around a large central island indicate only next to island interactions during the lateral self-assembling.
- OSTI ID:
- 20637073
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 14; Other Information: DOI: 10.1063/1.1895476; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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