A modified two-stage process for the preparation of Zn(Te{sub x}Se{sub 1{minus}x}) films
Journal Article
·
· Materials Research Bulletin
- National Physical Lab., New Delhi (India). Materials Div.
- Univ. of Delhi (India). Dept. of Physics and Astrophysics
A modified low-pressure vapor-phase selenization process that enables controlled incorporation of multiple chalcogens in ZnSe semiconductor thin films has been demonstrated. Growth of polycrystalline ZnTe{sub x}Se{sub 1{minus}x} films and modification of the Te/Se ratio by varying the reactor pressure have been observed. Te incorporation results in the lowering of the band gap to 2.45 eV from 2.65 eV for pure ZnSe and reduction resistivity by a factor of 3. The increased Te incorporation in the film correlates with the value estimated from modeling of the gas dynamics of the system and is independently confirmed by XRD. These results indicate that the Te{sub 2}-Zn reaction is competitive with the Se{sub 5-7}-Zn reaction under the experimental conditions investigated.
- OSTI ID:
- 352414
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 1 Vol. 34; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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