Electrical and optical properties of Zn{sub x}Mg{sub 1{minus}x}Se/ZnTe and Zn{sub x}Mg{sub 1{minus}x}Se/GaAs heterojunctions
Conference
·
OSTI ID:541076
- N. Copernicus Univ., Torun (Poland). Inst. of Physics
This work deals with the study of the luminescence and electrical properties of Zn{sub x}Mg{sub 1{minus}x}Se epilayers grown by molecular-beam epitaxy on (001) GaAs and (111) ZnTe substrates. A small amount of Mg added to ZnSe leads to a sharp increase in the linewidth of exciton line from 2 MeV in pure ZnSe layer grown on GaAs substrate to about 310 MeV in Zn{sub 0.68}Mg{sub 0.32}Se. The band gap energy and lattice constant of Zn{sub x}Mg{sub 1{minus}x}Se increase with Mg content as well.
- OSTI ID:
- 541076
- Report Number(s):
- CONF-960450--; ISBN 0-7803-3179-6
- Country of Publication:
- United States
- Language:
- English
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