The impact of {ital in situ} photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North , California 27695 (United States)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Photoexcitation of silicon during low-fluence implantation with MeV Si and Ge ions is observed to suppress vacancy-type point-defect formation, as determined by {ital in situ} deep-level transient spectroscopy. The {ital A}-center formation after low-temperature implantation is extended over a wide temperature interval indicating that electrically inactive clusters, which emit vacancies during annealing, are formed in the end-of-range region during implantation at 85 K. The number of vacancies stored in these clusters is influenced by low-temperature {ital in situ} photoexcitation. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 351839
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 75; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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