Stimulated Desorption by Surface Electron Standing Waves

Journal Article · Wed Mar 31 23:00:00 EST 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.82.3348· OSTI ID:337559

Sieger, M T; Schenter, G K; Orlando, T M ^[1]

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1. W. R. Wiley Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, P.O. Box 999, MSIN K8-88, Richland, Washington 99352 (United States)

The total electron-stimulated desorption yield of Cl{sup +} ions from the Cl-terminated Si(111) surface is shown to exhibit fine-structure oscillations as a function of incident electron beam direction. We demonstrate that this fine structure is consistent with quantum-mechanical scattering and interference of the incident electron. Comparison of experimental data to a qualitative theory reveals the site of the excitation responsible for desorption, and the ground-state atomic bonding geometry of the desorbate. The data are consistent with desorption initiated by an excitation localized on the Si atom bonded to Cl. {copyright} {ital 1999} {ital The American Physical Society}

• Research Organization: Pacific Northwest National Laboratory
• DOE Contract Number: AC06-76RL01830
• OSTI ID: 337559
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 16 Vol. 82; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
66 PHYSICS
CHLORINE
DESORPTION
ELECTRON BEAMS
ELECTRONIC STRUCTURE
EXCITATION
FINE STRUCTURE
INTERFERENCE
SCATTERING
SILICON
STANDING WAVES
SURFACE TREATMENTS