Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
Yttria-stabilized zirconia (YSZ) thin films grown by pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate. {copyright} {ital 1999 Materials Research Society.}
- OSTI ID:
- 337514
- Journal Information:
- Journal of Materials Research, Vol. 14, Issue 4; Other Information: PBD: Apr 1999
- Country of Publication:
- United States
- Language:
- English
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