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Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

Journal Article · · Journal of Materials Research
; ;  [1]
  1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
Yttria-stabilized zirconia (YSZ) thin films grown by pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate. {copyright} {ital 1999 Materials Research Society.}
OSTI ID:
337514
Journal Information:
Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 4 Vol. 14; ISSN JMREEE; ISSN 0884-2914
Country of Publication:
United States
Language:
English