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Growth and characterization of highly oriented gadolinia-doped ceria (111) thin films on zirconia (111)/sapphire (0001) substrates

Journal Article · · Thin Solid Films, 516(18):6088-6094

Highly-oriented pure and gadolinia-doped ceria thin films have been grown on pure and ZrO2 (111)-buffered Al2O3 (0001) substrates using oxygen plasma-assisted molecular beam epitaxy (OPA-MBE) to understand the oxygen ionic transport processes in ceria based oxide thin films. Gadolinia-doped ceria films grown on pure Al2O3(0001) substrate show polycrystalline features due to structural deformations resulting from the large lattice mismatch between the Al2O3(0001) substrate and the films. However, the films, grown on a thin layer of ZrO2(111) buffered Al2O3 (0001) substrate, appears to be highly oriented. These films were characterized using high resolution transmission electron microscopy (HRTEM) and x-ray photoelectron spectroscopy (XPS) depth profiling. Oxygen ionic conductivity in gadolinia-doped ceria films was measured as a function of Gd concentration and these results were compared with the ion conductance data of the polycrystalline and single crystalline yttria-stabilized zirconia (YSZ).

Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
939008
Report Number(s):
PNNL-SA-54370; 11696; KP1704020
Journal Information:
Thin Solid Films, 516(18):6088-6094, Journal Name: Thin Solid Films, 516(18):6088-6094 Journal Issue: 18 Vol. 516; ISSN THSFAP; ISSN 0040-6090
Country of Publication:
United States
Language:
English