Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs
- Naval Surface Warfare Center, Crane, IN (United States)
- Wheatley (C.F.), Drums, PA (United States)
- Harris Semiconductor, Mountaintop, PA (United States)
- Naval Research Lab., Washington, DC (United States)
The effect of ion energy upon the ion-induced dielectric breakdown response of the capacitor response in vertical power metal-oxide semiconductor field effect transistors (MOSFETs) was investigated. The single event gate rupture response was experimentally determined using mono-energetic ion beams of copper, niobium, and gold. Irradiations were conducted using an ion species tuned to different energies, producing a range of linear energy transfer (LET) values for that ion. Numerous MOSFETs were characterized to identify the onset of ion-induced dielectric breakdown. These data along with previously taken data demonstrated that the ion-induced dielectric breakdown cannot be adequately described in terms of LET, but is better described in terms of atomic number (Z). Based upon these observations, a new semi-empirical expression is presented describing the critical ion-induced breakdown response in terms of Z instead of LET. This expression is shown to be a better single event gate rupture model of the capacitor response.
- OSTI ID:
- 323925
- Report Number(s):
- CONF-980705--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 45; ISSN IETNAE; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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