Single-event gate rupture in vertical power MOSFETs: An original empirical expression

Conference · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6450449

Wheatley, C F ^[1]; Titus, J L ^[2]; Burton, D I ^[3]

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1. Wheatley (C.F.), Drums, PA (United States)
2. Naval Surface Warfare Center, Crane, IN (United States)
3. Harris Semiconductor, Mountaintop, PA (United States)

For the first time, an empirical expression is derived that describes the susceptibility of a power double-diffused metal-oxide semiconductor (DMOS) field-effect transistor (FET) to single-event gate rupture (SEGR) induced by the interaction of mono-energetic ions with regions of the n-epi, gate oxide, and polysilicon gate. Using this expression, the failure threshold voltages for the gate and drain can be analytically determined for any particular value of energy deposition along the ion's path or more commonly described as the ion's linear energy transfer (LET) function. This paper delineates the research, an in-depth study of vertical power DMOS transistors, having a 50-nm gate oxide and a strong SEGR response, subjected to various mono-energetic ions, representing particular values of LET between 0 and 83 MeV[center dot]cm[sup 2][center dot]mg[sup [minus]1]. A description of the devices characterized, the test setup and test methodology employed, the failure threshold voltages measured, and the analysis techniques used are all summarized. Finally, an empirical equation is presented that portrays the locus of SEGR in the ([minus]V[sub GS]), V[sub DS] plane for all values of LET.

• OSTI ID: 6450449
• Report Number(s): CONF-940726--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANALYTICAL SOLUTION
COSMIC RADIATION
FAILURES
FIELD EFFECT TRANSISTORS
IONIZING RADIATIONS
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SENSITIVITY
SPACE FLIGHT
TRANSISTORS