Low-field colossal magnetoresistance in manganite tunnel junctions
Book
·
OSTI ID:323417
- CNRS-Thomson CSF, Orsay (France)
- CEA Saclay, Gif sur Yvette (France)
Large magnetoresistance values are obtained on tunnel junctions epitaxially deposited by pulsed-laser deposition and consisting of ferromagnetic manganite La{sub 0.67}Sr{sub 0.33}MnO{sub 3} electrodes separated by various tunnel barriers: SrTiO{sub 3}, PrBaCu{sub 2.8}Ga{sub 0.2}O{sub 7} and CeO{sub 2}. The magnetoresistance can be decomposed into a low-field and a high-field contribution. The latter is attributed to the presence of canted interfacial manganite phases, as confirmed by the temperature behavior of the resistance. A low-field magnetoresistance ratio of 450% below 100 Oe is obtained on a sample with a SrTiO{sub 3} barrier, indicating a spin polarization value in excess of 0.83 for the manganite.
- OSTI ID:
- 323417
- Report Number(s):
- CONF-971201--; ISBN 1-55899-399-1
- Country of Publication:
- United States
- Language:
- English
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