Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxial La{sub 0.67}Sr{sub 0.33}MnO{sub 3} tunnel junctions
- Physics Department, Brown University, Providence, Rhode Island 02912 (United States)
- IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10698 (United States)
- Materials Science and Engineering Department, Northwestern University, Evanston, Illinois 60208 (United States)
We have used a self-aligned lithographic process to fabricate magnetic tunnel junctions of La{sub 0.67}Sr{sub 0.33}MnO{sub 3} down to a few micrometers in size. We have obtained a magnetoresistance ratio as large as 83{percent} at low magnetic fields of a few tens of Oe, which correspond to the coercivities of the magnetic layers. Transmission-electron-microscopy analysis has revealed the heteroepitaxial growth of the trilayer junction structure, La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3}. We have observed current-voltage characteristics typical of electron tunneling across an insulating barrier. The large magnetoresistance is likely due to the nearly half-metallic electronic structure of the manganites. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 383831
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 54, Issue 12; Other Information: PBD: Sep 1996
- Country of Publication:
- United States
- Language:
- English
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