Epitaxial La{sub 0.67}Sr{sub 0.33}MnO{sub 3} magnetic tunnel junctions

Journal Article · Tue Apr 01 04:00:00 EST 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.364585· OSTI ID:544303

Li, X W; Lu, Y; Gong, G Q; Xiao, G ^[1]; Gupta, A; Lecoeur, P; Sun, J Z ^[2]; Wang, Y Y; Dravid, V P ^[3]

---

1. Department of Physics, Brown University, Providence, Rhode Island 02912 (United States)
2. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10698 (United States)
3. Materials Science and Engineering Department, Northwestern University, Evanston, Illinois 60208 (United States)

We report the observation of a large magnetoresistance (83{percent}) at low magnetic fields of tens of Oe at 4.2 K in the epitaxial trilayer junction structure, La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3}. The spin-polarization parameter of the manganite has been determined from the magnetoresistance value. The switching fields of the two magnetic layers were designed by using the magnetic shape anisotropy. By limiting the sweeping field in a low field range ({approximately}100 Oe), we have achieved bistable resistive states at zero field, which is of potential interest for magnetoelectronic applications. {copyright} {ital 1997 American Institute of Physics.}

• DOE Contract Number: FG02-92ER45475
• OSTI ID: 544303
• Report Number(s): CONF-961141--
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
EPITAXY
FERROMAGNETIC MATERIALS
LANTHANUM OXIDES
MAGNETIC MOMENTS
MAGNETORESISTANCE
MANGANESE OXIDES
PEROVSKITES
SEMICONDUCTOR JUNCTIONS
STRONTIUM OXIDES
TUNNEL EFFECT