Charge Accumulation at a Threading Edge Dislocation in GaN

Journal Article · Wed Jan 20 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123018· OSTI ID:3214

Leung, K ^[1]; Stechel, E B; Wright, A F

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1. Sandia National Laboratories

We have performed Monte Carlo calculations to determine the charge accumulation on threading edge dislocations in GaN as a function of the dislocation density and background dopant density. Four possible core structures have been examined, each of which produces defect levels in the gap and may therefore act as electron or hole traps. Our results indicate that charge accumulation, and the resulting electrostatic interactions, can change the relative stabilities of the different core structures. Structures having Ga and N vacancies at the dislocation core are predicted to be stable under nitrogen-rich and gallium-rich growth conditions, respectively. Due to dopant depletion at high dislocation density and the multitude of charge states, the line charge exhibits complex crossover behavior as the dopant and dislocation densities vary.

• Research Organization: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 3214
• Report Number(s): SAND99-0123J; ON: DE00003214
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Charge Distribution
Doped Materials
Edge Dislocations
Energy Gap
Energy Levels
Gallium Nitrides
Monte Carlo Method
Stability
Theoretical Data