Dynamics of threading dislocations in porous heteroepitaxial GaN films
- Russian Academy of Sciences, Institute of Problems of Mechanical Engineering (Russian Federation)
Behavior of threading dislocations in porous heteroepitaxial gallium nitride (GaN) films has been studied using computer simulation by the two-dimensional discrete dislocation dynamics approach. A computational scheme, where pores are modeled as cross sections of cylindrical cavities, elastically interacting with unidirectional parallel edge dislocations, which imitate threading dislocations, is used. Time dependences of coordinates and velocities of each dislocation from dislocation ensembles under investigation are obtained. Visualization of current structure of dislocation ensemble is performed in the form of a location map of dislocations at any time. It has been shown that the density of appearing dislocation structures significantly depends on the ratio of area of a pore cross section to area of the simulation region. In particular, increasing the portion of pores surface on the layer surface up to 2% should lead to about a 1.5-times decrease of the final density of threading dislocations, and increase of this portion up to 15% should lead to approximately a 4.5-times decrease of it.
- OSTI ID:
- 22771670
- Journal Information:
- Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 12 Vol. 59; ISSN 1063-7834
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
APPROXIMATIONS
COMPUTERIZED SIMULATION
CROSS SECTIONS
CYLINDRICAL CONFIGURATION
DENSITY
EDGE DISLOCATIONS
FILMS
GALLIUM NITRIDES
LAYERS
POROUS MATERIALS
SURFACES
TIME DEPENDENCE
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS
VELOCITY