Charge accumulation at a threading edge dislocation in gallium nitride

Journal Article · Thu Apr 01 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123018· OSTI ID:336607

Leung, K; Wright, A F ^[1]; Stechel, E B ^[2]

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1. Sandia National Laboratories, MS 1421, Albuquerque, New Mexico 87185 (United States)
2. Ford Motor Company, MD 3028/SRL, Dearborn, Michigan 48121-2053 (United States)

We have performed Monte Carlo calculations to determine the charge accumulation on threading edge dislocations in GaN as a function of the dislocation density and background dopant density. Four possible core structures have been examined, each of which produces defect levels in the gap and may therefore act as electron or hole traps. Our results indicate that charge accumulation, and the resulting electrostatic interactions, can change the relative stabilities of the different core structures. Structures having Ga and N vacancies at the dislocation core are predicted to be stable under nitrogen-rich and gallium-rich growth conditions, respectively. Due to dopant depletion at high dislocation density and the multitude of charge states, the line charge exhibits complex crossover behavior as the dopant and dislocation densities vary. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 336607
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 74; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
EDGE DISLOCATIONS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
MONTE CARLO METHOD
SIMULATION
THIN FILMS
VACANCIES