A model for the bipolar-like response of GaAs MESFETs to a high dose rate environment
Journal Article
·
· IEEE Transactions on Nuclear Science
- Rensselaer Polytechnic Inst., Troy, NY (United States).Dept. of Nuclear Engineering and Engineering Physics
- Oregon Graduate Inst., Portland, OR (United States)
A model for bipolar mechanism, initiated in some MESFETs during a radiation transient, is presented. It differs from other models in its postulation that the neutral base is formed during the transient and is not present during normal device operation. The response mechanism is due to the geometry of the device and does not depend on its material properties.
- OSTI ID:
- 32021
- Report Number(s):
- CONF-940726--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 41; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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