Experiments and modeling of the photocurrent response of GaAs MESFETs

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5933512

Howard, J W; Islam, N E; Block, R C; Becker, M ^[1]; Ishaque, A N ^[2]; Chang, J Y; Stauber, M ^[3]

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1. Rensselaer Polytechnic Inst., Troy, NY (USA). Dept. of Nuclear Engineering
2. Rensselaer Polytechnic Inst., Troy, NY (USA). Dept. of Electrical, Computer, and Systems Engineering
3. Grumman Corp., Bethpage, NY (USA). Corporate Research Center

One micron technology GaAs MESFETs have been exposed to a transient radiation environment at a linear accelerator laboratory and modeled by computer simulation using a modified version of the PISCES-IIB semiconductor device simulation code and the TRIGSPICE circuit simulation code. The MESFETs were tested in steady-state conditions, with short (20 ns) radiation pulses, and with short pulses on devices that had received a prior dose of gamma, neutron or neutron-plus-gamma irradiation. Parasitic bipolar action was observed in the short pulse testing in unexposed devices. Previously unreported transient failure was observed in the neutron pre-irradiated devices only. The threshold for this failure was consistent with the level of severity of prior irradiation. Steady-state photocurrent and the parasitic bipolar transistor are modeled and explained on the basis of physical mechanisms.

• OSTI ID: 5933512
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
99 GENERAL AND MISCELLANEOUS
990200 -- Mathematics & Computers
ACCELERATORS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
COMPUTER CODES
COMPUTERIZED SIMULATION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRICAL TRANSIENTS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ENERGY
FERMIONS
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
HADRONS
IONIZING RADIATIONS
LINEAR ACCELERATORS
MATHEMATICAL MODELS
NEUTRONS
NUCLEONS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
PULSES
RADIATION EFFECTS
RADIATIONS
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
SIMULATION
STEADY-STATE CONDITIONS
THRESHOLD ENERGY
TRANSIENTS
TRANSISTORS
VOLTAGE DROP