Extending the cutoff wavelength of lattice-matched GaInAsSb/GaSb thermophotovoltaics devices
- Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
- Lockheed Martin, Inc., Schenectady, NY (United States)
This paper reports the growth, materials characterization, and device performance of lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with cutoff wavelength as long as 2.5 {micro}m. GaInAsSb epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The growth temperature was 525 C. Although these alloys are metastable, a mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for alloys with PL peak emission at room temperature as long as 2.5 {micro}m. In general, however, a trend of decreasing material quality is observed as the wavelength increases. Both the surface roughness and PL full width at half-maximum increase with wavelength. In spite of the dependence of material quality on PL peak emission wavelength, the internal quantum efficiency of TPV devices with cutoff wavelengths of 2.3 to 2.5 {micro}m is as high as 86%.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 307866
- Report Number(s):
- KAPL-P-000113; K-98152; CONF-981055-; ON: DE99001619; TRN: AHC29905%%43
- Resource Relation:
- Conference: 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998; Other Information: PBD: Oct 1998
- Country of Publication:
- United States
- Language:
- English
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