Ultrafast carrier dynamics near the Si(100)2{times}1 surface

Journal Article · Sun Jan 31 23:00:00 EST 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.59.4943· OSTI ID:306266

Jeong, S ^[1]; Bokor, J ^[2]

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1. Center for X-Ray Optics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
2. Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720 (United States)

We present a time-resolved photoemission study of carrier dynamics near the Si(100)2{times}1 surface. It is found that the dominant contribution to the photoemission process originates from defect states on the Si(100)2{times}1 surface. Enhanced optical absorption is observed for these defect states and carrier exchange between these states and the bulk is observed. The electron density near the surface and the shape of the electron energy distribution are found to change on a very fast time scale. A simple theoretical model is established to extract transport parameters from the observed electron energy distribution. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 306266
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 59; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
CHARGE CARRIERS
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRON DENSITY
PHOTOEMISSION
SILICON
SURFACE PROPERTIES