Ultrafast carrier dynamics on the Si(100)2{times}1 surface

Journal Article · Sat Nov 30 23:00:00 EST 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.54.R17300· OSTI ID:404062

Jeong, S ^[1]; Zacharias, H ^[2]; Bokor, J ^[3]

---

1. Department of Physics, University of California, Berkeley, Berkeley, California 94720 (United States)
2. Fachbereich Physik, Universitaet Essen, 45117 Essen (Germany)
3. Department of EECS, University of California, Berkeley, Berkeley, California 94720 (United States)

We present a study of ultrafast carrier dynamics on the clean Si(100)2{times}1 surface using time-resolved photoemission spectroscopy. A rapid thermalization inside the surface band is observed, and the carrier relaxation occurs on a time scale of a few hundred femtoseconds to a few picoseconds depending on the initial state energy. The relaxation time increases as the initial state energy decreases with respect to the band minimum. {copyright} {ital 1996 The American Physical Society.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 404062
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 24 Vol. 54; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
ELECTRONIC STRUCTURE
PHOTOEMISSION
RELAXATION TIME
SILICON
SURFACE PROPERTIES
SURFACE STATES
THERMALIZATION
TIME RESOLUTION