Monolithic two-junction AlGaAs/GaAs solar cells
Book
·
OSTI ID:304408
- Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation)
Monolithic two-junction two-terminal AlGaAs/GaAs solar cells were grown during two-stage liquid phase epitaxy. At the first stage the GaAs-based bottom subcell with a tunnel junction was grown on n-GaAs(Sn) substrate. Test samples of such a cell without layers of the tunnel junction and with thin enough {rho}-Al{sub 0.9}Ga{sub 0.1}As window layer demonstrated the efficiencies of 27.5% (AM1.5D, 140 suns) and of about 25% (AM1.5D, 1000--1500 suns). At the second stage the top AlGaAs subcell was grown. The following parameters have been measured in tandems: V{sub oc} = 2.53 V, FF = 0.80 at 50 suns (AM0). An efficiency of 20.3% (AM0) has been achieved.
- OSTI ID:
- 304408
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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