Graded band-gap p/n AlGaAs solar cells grown by organometallic vapor phase epitaxy

Journal Article · Sun Jul 15 04:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95154· OSTI ID:7034930

Wagner, D K; Shealy, J R

The growth of p/n graded band-gap AlGaAs/GaAs solar cells by organometallic vapor phase epitaxy is reported. The best performance is obtained for a cell with the emitter graded from 0 to 45 at. % aluminum over a distance of 0.3 ..mu..m. The corresponding solar cell parameters are I/sub sc/ = 27.3 mA/cm/sup 2/, V/sub oc/ = 1.01 V, and FF = 0.73 at 1 sun AM0, corresponding to a conversion efficiency of 14.7%.

• Research Organization: School of Electrical Engineering, Cornell University, Ithaca, New York 14853
• OSTI ID: 7034930
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDE SOLAR CELLS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
EFFICIENCY
ENERGY GAP
EPITAXY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
JUNCTIONS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
P-N JUNCTIONS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
PNICTIDES
QUANTUM EFFICIENCY
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
VAPOR PHASE EPITAXY