Properties of a-Si:H and a-(Si,Ge):H solar cells prepared using ECR deposition techniques
- Iowa State Univ., Ames, IA (United States). Microelectronics Research Center
In this paper, the authors describe the device preparation, properties and stability of a-Si:H and a-(Si,Ge):H solar cells prepared using the electron cyclotron resonance (ECR) plasma deposition techniques. They show that by controlling the plasma chemistry, they can produce very good devices in the substrate geometry in a single chamber reactor. Both single junction and tandem junction a-Si:H solar cells have been prepared with high fill factors and good voltages. The stability of these devices is excellent. The authors have also prepared graded gap a-(Si,Ge):H cells, and they also show very good stability upon light soaking. They find that the properties of a-(Si,Ge):H cells depend critically upon the plasma conditions, and that controlled ion bombardment may be beneficial for improving the performance of these cells.
- OSTI ID:
- 304353
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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