A critical review of the growth and properties of a-(Si,Ge):H
Conference
·
OSTI ID:208103
- Iowa State Univ., Ames, IA (United States)
The authors review the status of a-(Si,Ge):H technology for tandem cell applications. In particular, they show that the chemistry of growth and deposition conditions play a major role in determining the properties of a-(Si,Ge):H. They explain why dilution is necessary to make good films, and show that ion bombardment plays a major role in improving the properties of the material. Recent work on films deposited using ion bombardment in a controlled ECR reactor environment is discussed, and it is shown that fundamental material properties such as Urbach energies and mid-gap defects can be improved using controlled bombardment. It is also shown that high ion bombardment in glow-discharge deposited devices improves the fundamental material properties. They also discuss the unknown parameters in the a-(Si,Ge):H system, and suggest some research avenues that should be pursued.
- OSTI ID:
- 208103
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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