Stability of single and tandem junction a-Si:H solar cells grown using the ECR process
Conference
·
OSTI ID:20085569
The authors report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:H/A-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). They show that devices with high fill factors can be made using the H-ECR process. They also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show very little degradation even after 500 hours of illumination under 2 x sunlight illumination.
- Research Organization:
- Iowa State Univ., Ames, IA (US)
- Sponsoring Organization:
- National Renewable Energy Laboratory
- OSTI ID:
- 20085569
- Country of Publication:
- United States
- Language:
- English
Similar Records
Properties of a-Si:H and a-(Si,Ge):H solar cells prepared using ECR deposition techniques
Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices
Study on limiting efficiencies of a-Si:H/μc-Si:H-based single-nanowire solar cells under single and tandem junction configurations
Book
·
Tue Dec 30 23:00:00 EST 1997
·
OSTI ID:304353
Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices
Technical Report
·
Fri Sep 29 00:00:00 EDT 2000
·
OSTI ID:765093
Study on limiting efficiencies of a-Si:H/μc-Si:H-based single-nanowire solar cells under single and tandem junction configurations
Journal Article
·
Sun Nov 01 23:00:00 EST 2015
· Applied Physics Letters
·
OSTI ID:22485981