Schottky energy barriers and charge injection in metal/Alq/metal structures

Journal Article · Fri Jan 01 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123145· OSTI ID:302890

Campbell, I H; Smith, D L ^[1]

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1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

We present internal photoemission, photocurrent versus bias voltage, and current{endash}voltage measurements of metal/tris-(8-hydroxyquinoline) aluminum [Alq]/metal structures. Internal photoemission and photocurrent versus bias measurements were used to determine metal/Alq Schottky energy barriers for a range of contact metals with work functions from 2.7 eV (Sm) to 5.6 eV (Pt). The electron Schottky barrier for low work-function metals ({lt}about 3.6 eV) is pinned at about 0.6 eV. For metals with higher work functions ({gt} about 3.6 eV) the ideal Schottky model is generally accurate. A previously established device model was used to describe the current{endash}voltage characteristics using the measured Schottky barriers. The results imply comparable electron and hole mobilities of about 2{times}10{sup {minus}5} cm{sup 2}/V s at an electric field of 10{sup 6} V/cm. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 302890
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 74; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM
ELECTRON MOBILITY
HOLE MOBILITY
LIGHT EMITTING DIODES
ORGANIC SEMICONDUCTORS
ORGANOMETALLIC COMPOUNDS
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PHOTOEMISSION
SCHOTTKY BARRIER DIODES
WORK FUNCTIONS