The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

Journal Article · Wed Apr 01 04:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.121208· OSTI ID:624847

Campbell, I H; Davids, P S; Smith, D L ^[1]; Barashkov, N N; Ferraris, J P ^[2]

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1. Los Alamos National Laboratory, Los Alamos, New Mexico87545 (United States)
2. The University of Texas at Dallas, Richardson, Texas75083 (United States)

We present device model calculations of the current{endash}voltage (I{endash}V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I{endash}V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I{endash}V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 624847
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 72; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
LIGHT EMITTING DIODES
ORGANIC COMPOUNDS
POLYMERS
SCHOTTKY BARRIER DIODES
SPACE CHARGE
THERMIONIC EMISSION