Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

Yapparov, Rinat; Quevedo, Alejandro; Tak, Tanay; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Marcinkevičius, Saulius

doi:10.1063/5.0271165

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

Journal Article · Thu May 29 00:00:00 EDT 2025 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0271165· OSTI ID:3023038

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KTH Royal Inst. of Technology, Stockholm (Sweden)
Univ. of California, Santa Barbara, CA (United States)

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: National Science Foundation; USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0009691

Other Award/Contract Number:: P2022-00251
2023-03538
DMS-1839077
601952

OSTI ID:: 3023038

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 126; ISSN 1077-3118; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

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