Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Yapparov, Rinat; Tak, Tanay; Ewing, Jacob; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Marcinkevičius, Saulius

doi:10.1063/5.0227663

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Journal Article · Mon Aug 26 00:00:00 EDT 2024 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0227663· OSTI ID:3023031

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KTH Royal Inst. of Technology, Stockholm (Sweden)
Univ. of California, Santa Barbara, CA (United States)

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); Swedish Energy Agency; USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0009691

Other Award/Contract Number:: P2022-00251
2023-03538
DMS-1839077
601952
2150283

OSTI ID:: 3023031

Alternate ID(s):: OSTI ID: 2578613

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 136; ISSN 0021-8979; ISSN 1089-7550

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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