Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Marcinkevičius, Saulius; Tak, Tanay; Chow, Yi Chao; Wu, Feng; Yapparov, Rinat; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

doi:10.1063/5.0206357

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Journal Article · Wed May 01 00:00:00 EDT 2024 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0206357· OSTI ID:3023026

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KTH Royal Inst. of Technology, Stockholm (Sweden)
Univ. of California, Santa Barbara, CA (United States)

The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar {$$10\bar{1}1$$} QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. In this work, we study the carrier transfer from the semipolar to polar QWs by time-resolved photoluminescence in long wavelength (green to red) LEDs. We find that the carrier transfer through the semipolar QWs is fast, a few tens of picoseconds with the estimated room temperature ambipolar diffusion coefficient of ∼5.5 cm²/s. With diffusion much faster than recombination, the hole transport from the p-side of the structure to the polar QWs should proceed without a substantial loss, contributing to the high efficiency of long wavelength GaN LEDs.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0009691

Other Award/Contract Number:: P2022-00251
2023-03538
DMS-1839077
601952
2150283

OSTI ID:: 3023026

Alternate ID(s):: OSTI ID: 2578530

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 124; ISSN 1077-3118; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (35)

Lateral charge carrier diffusion in InGaN quantum wells Danhof, J.; Solowan, H. -M.; Schwarz, U. T. physica status solidi (b), Vol. 249, Issue 3 https://doi.org/10.1002/pssb.201100476	journal	January 2012
Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures Nomeika, K.; Aleksiejūnas, R.; Miasojedovas, S. Journal of Luminescence, Vol. 188 https://doi.org/10.1016/j.jlumin.2017.04.055	journal	August 2017
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells Yamaguchi, Yudai; Kanitani, Yuya; Kudo, Yoshihiro Nano Letters, Vol. 22, Issue 17 https://doi.org/10.1021/acs.nanolett.2c01479	journal	September 2022
Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy Mensi, Mounir; Ivanov, Ruslan; Uždavinys, Tomas K. ACS Photonics, Vol. 5, Issue 2 https://doi.org/10.1021/acsphotonics.7b01061	journal	November 2017
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells Wu, X. H.; Elsass, C. R.; Abare, A. Applied Physics Letters, Vol. 72, Issue 6 https://doi.org/10.1063/1.120844	journal	February 1998
Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes David, Aurélien; Grundmann, Michael J.; Kaeding, John F. Applied Physics Letters, Vol. 92, Issue 5 https://doi.org/10.1063/1.2839305	journal	February 2008
Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes Liu, J. P.; Ryou, J. -H.; Dupuis, R. D. Applied Physics Letters, Vol. 93, Issue 2 https://doi.org/10.1063/1.2957667	journal	July 2008
Time-resolved luminescence studies of proton-implanted GaN Pinos, A.; Marcinkevičius, S.; Usman, M. Applied Physics Letters, Vol. 95, Issue 11 https://doi.org/10.1063/1.3226108	journal	September 2009
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells Liuolia, Vytautas; Marcinkevičius, Saulius; Lin, You-Da Journal of Applied Physics, Vol. 108, Issue 2 https://doi.org/10.1063/1.3460278	journal	July 2010
Carrier dynamics in bulk GaN Šcˇajev, Patrik; Jarašiūnas, Kęstutis; Okur, Serdal Journal of Applied Physics, Vol. 111, Issue 2 https://doi.org/10.1063/1.3673851	journal	January 2012
Effects of lateral current injection in GaN multi-quantum well light-emitting diodes Kivisaari, Pyry; Oksanen, Jani; Tulkki, Jukka Journal of Applied Physics, Vol. 111, Issue 10 https://doi.org/10.1063/1.4720584	journal	May 2012
Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography Shivaraman, Ravi; Kawaguchi, Y.; Tanaka, S. Applied Physics Letters, Vol. 102, Issue 25 https://doi.org/10.1063/1.4812363	journal	June 2013
Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells Ivanov, R.; Marcinkevičius, S.; Zhao, Y. Applied Physics Letters, Vol. 107, Issue 21 https://doi.org/10.1063/1.4936386	journal	November 2015
Tutorial: Defects in semiconductors—Combining experiment and theory Alkauskas, Audrius; McCluskey, Matthew D.; Van de Walle, Chris G. Journal of Applied Physics, Vol. 119, Issue 18 https://doi.org/10.1063/1.4948245	journal	May 2016
Photoexcited carrier trapping and recombination at Fe centers in GaN Uždavinys, T. K.; Marcinkevičius, S.; Leach, J. H. Journal of Applied Physics, Vol. 119, Issue 21 https://doi.org/10.1063/1.4953219	journal	June 2016
Interwell carrier transport in InGaN/(In)GaN multiple quantum wells Marcinkevičius, Saulius; Yapparov, Rinat; Kuritzky, Leah Y. Applied Physics Letters, Vol. 114, Issue 15 https://doi.org/10.1063/1.5092585	journal	April 2019
Structure of V-defects in long wavelength GaN-based light emitting diodes Wu, Feng; Ewing, Jacob; Lynsky, Cheyenne Journal of Applied Physics, Vol. 133, Issue 3 https://doi.org/10.1063/5.0135278	journal	January 2023
Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes Chow, Yi Chao; Tak, Tanay; Wu, Feng Applied Physics Letters, Vol. 123, Issue 9 https://doi.org/10.1063/5.0167779	journal	August 2023
Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs Marcinkevičius, Saulius; Ewing, Jacob; Yapparov, Rinat Applied Physics Letters, Vol. 123, Issue 20 https://doi.org/10.1063/5.0179513	journal	November 2023
Theory of interface roughness scattering in quantum wells Penner, U.; Rücker, H.; Yassievich, I. N. Semiconductor Science and Technology, Vol. 13, Issue 7 https://doi.org/10.1088/0268-1242/13/7/009	journal	July 1998
Long-Range Carrier Diffusion in (In,Ga)N Quantum Wells and Implications from Fundamentals to Devices David, Aurelien Physical Review Applied, Vol. 15, Issue 5 https://doi.org/10.1103/PhysRevApplied.15.054015	journal	May 2021
Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells Ho, Cheng-Han; Speck, James S.; Weisbuch, Claude Physical Review Applied, Vol. 17, Issue 1 https://doi.org/10.1103/PhysRevApplied.17.014033	journal	January 2022
Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy Tak, Tanay; Johnson, Cameron W.; Ho, Wan Ying Physical Review Applied, Vol. 20, Issue 6 https://doi.org/10.1103/PhysRevApplied.20.064045	journal	December 2023
Impact of recombination centers on the spontaneous emission of semiconductors under steady-state and transient conditions Brandt, Oliver; Yang, Hui; Ploog, Klaus H. Physical Review B, Vol. 54, Issue 8 https://doi.org/10.1103/PhysRevB.54.R5215	journal	August 1996
Ultrafast carrier relaxation in GaN, In 0.05 Ga 0.95 N , and an In 0.07 Ga 0.93 N / In 0.12 Ga 0.88 N multiple quantum well Özgür, Ümit; Everitt, Henry O. Physical Review B, Vol. 67, Issue 15 https://doi.org/10.1103/PhysRevB.67.155308	journal	April 2003
Emission and recombination characteristics of Ga 1 − x In x N ∕ Ga N quantum well structures with nonradiative recombination suppression by V-shaped pits Netzel, Carsten; Bremers, Heiko; Hoffmann, Lars Physical Review B, Vol. 76, Issue 15 https://doi.org/10.1103/PhysRevB.76.155322	journal	October 2007
Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopy Deveaud, Benoit; Shah, Jagdeep; Damen, T. C. Physical Review Letters, Vol. 58, Issue 24 https://doi.org/10.1103/PhysRevLett.58.2582	journal	June 1987
Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes Scheibenzuber, Wolfgang G.; Schwarz, Ulrich T. Applied Physics Express, Vol. 5, Issue 4 https://doi.org/10.1143/APEX.5.042103	journal	April 2012
Lateral carrier injection for the uniform pumping of several quantum wells in InGaN/GaN light-emitting diodes Schiavon, Dario; Chlipala, Mikolaj; Perlin, Piotr Optics Express, Vol. 29, Issue 3 https://doi.org/10.1364/OE.411449	journal	January 2021
Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers Chang, Jih-Yuan; Chang, Yi-An; Wang, Tsun-Hsin Optics Letters, Vol. 39, Issue 3 https://doi.org/10.1364/OL.39.000497	journal	January 2014
Efficient emission of InGaN-based light-emitting diodes: toward orange and red Zhang, Shengnan; Zhang, Jianli; Gao, Jiangdong Photonics Research, Vol. 8, Issue 11 https://doi.org/10.1364/PRJ.402555	journal	January 2020
Efficient InGaN-based yellow-light-emitting diodes Jiang, Fengyi; Zhang, Jianli; Xu, Longquan Photonics Research, Vol. 7, Issue 2 https://doi.org/10.1364/PRJ.7.000144	journal	January 2019
InGaN-based red light-emitting diodes: from traditional to micro-LEDs Zhuang, Zhe; Iida, Daisuke; Ohkawa, Kazuhiro Japanese Journal of Applied Physics, Vol. 61, Issue SA https://doi.org/10.35848/1347-4065/ac1a00	journal	December 2021
Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate Kojima, Kazunobu; Takashima, Shinya; Edo, Masaharu Applied Physics Express, Vol. 10, Issue 6 https://doi.org/10.7567/APEX.10.061002	journal	May 2017
Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well Solowan, Hans-Michael; Danhof, Julia; Schwarz, Ulrich T. Japanese Journal of Applied Physics, Vol. 52, Issue 8S https://doi.org/10.7567/JJAP.52.08JK07	journal	August 2013

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