Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs

Marcinkevičius, Saulius; Ewing, Jacob; Yapparov, Rinat; Wu, Feng; Nakamura, Shuji; Speck, James S.

doi:10.1063/5.0179513

Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs

Journal Article · Mon Nov 13 00:00:00 EST 2023 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0179513· OSTI ID:3023021

^[1]; ^[2]; ^[1]; Wu, Feng ^[2]; ^[2]; ^[2]

KTH Royal Inst. of Technology, Stockholm (Sweden)
Univ. of California, Santa Barbara, CA (United States)

Hole injection through V-defect sidewalls into all quantum wells (QWs) of long wavelength GaN light emitting diodes had previously been proposed as means to increase efficiency of these devices. In this work, we directly tested the viability of this injection mechanism by electroluminescence and time-resolved photoluminescence measurements on a device in which QW furthest away from the p-side of the structure was deeper, thus serving as an optical detector for presence of injected electron–hole pairs. Emission from the detector well confirmed that, indeed, the holes were injected into this QW, which could only take place through the {$$10\bar{1}1$$} V-defect sidewalls. Unlike direct interwell transport by thermionic emission, this transport mechanism allows populating all QWs of a multiple QW structure despite the high potential barriers in the long wavelength InGaN/GaN QWs.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0009691

Other Award/Contract Number:: P2022-00251
601952
601954
1027114
DMS-1839077
2150283

OSTI ID:: 3023021

Alternate ID(s):: OSTI ID: 2578439

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 123; ISSN 1077-3118; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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