Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Yapparov, Rinat; Tak, Tanay; Ewing, Jacob; Wu, Feng; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Marcinkevičius, Saulius

doi:10.1063/5.0215336

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Journal Article · Wed Jul 17 00:00:00 EDT 2024 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0215336· OSTI ID:3023029

^[1]; ^[2]; ^[2]; Wu, Feng ^[2]; ^[2]; ^[2]; ^[2]; ^[1]

KTH Royal Inst. of Technology, Stockholm (Sweden)
Univ. of California, Santa Barbara, CA (United States)

The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$$10\bar{1}1$$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm²/s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); Simons Foundation; Swedish Energy Agency; USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0009691

Other Award/Contract Number:: P2022-00251
2023-03538
DMS-1839077
601952
2150283

OSTI ID:: 3023029

Alternate ID(s):: OSTI ID: 2578562

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 125; ISSN 1077-3118; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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