Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

Jacques, Leonard; Spurling, R. Jackson; Maria, Jon-Paul; Trolier-McKinstry, Susan

doi:10.1063/5.0293746

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

Journal Article · Sun Dec 07 23:00:00 EST 2025 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0293746· OSTI ID:3011752

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Pennsylvania State Univ., University Park, PA (United States)

This study reports the thickness scaling of sputtered ferroelectric Zn_0.61Mg_0.39O (ZMO) thin films down to 43 nm. Encapsulated IrO₂/ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm⁻² and coercive fields that increased from 3.9 to 4.4 MV cm⁻¹ as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

View Accepted Manuscript (DOE)

Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021118

OSTI ID:: 3011752

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 127; ISSN 1077-3118; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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