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Physics of wurtzite ferroelectrics

Journal Article · · MRS Bulletin
 [1];  [2];  [3];  [3];  [4]
  1. Nanostructures Research Laboratory, Nagoya (Japan); Institute of Science Tokyo, Yokohama (Japan)
  2. The Pennsylvania State University, University Park, PA (United States)
  3. Carnegie Mellon University, Pittsburgh, PA (United States)
  4. Rensselaer Polytechnic Institute, Troy, NY (United States)

Ferroelectricity was long considered incompatible with the wurtzite structure, but the recent discovery of switchable polarization in wurtzite alloys has renewed interest in these materials for integrated electronic and memory applications. The development of wurtzite ferroelectrics faces significant technological challenges, which can be addressed through a fundamental physical understanding of their dielectric and ferroelectric properties. This article focuses on the physics that govern the polarization switching behavior, emphasizing the atomic- and meso-scale (domain) mechanisms involved in the transition between polarization states. A distinguishing feature of this article is a deep dive into the role of intrinsic and extrinsic defects—an area that has received limited attention in prior reviews, but is increasingly recognized as central to polarization switching, coercive fields, leakage, and fatigue. We highlight how defect behavior evolves during processing and electrical cycling, often contributing to long-term degradation. We also introduce powerful first-principles defect calculations, common in semiconductors but not yet widespread in ferroelectrics, as tools to understand and design materials. By integrating recent theoretical and experimental insights, we aim to provide a framework for advancing wurtzite ferroelectrics.

Research Organization:
The Pennsylvania State University, University Park, PA (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES); MEXT Program; JSPS KAKENHI
Grant/Contract Number:
SC0021118
OSTI ID:
2997115
Journal Information:
MRS Bulletin, Journal Name: MRS Bulletin; ISSN 1938-1425; ISSN 0883-7694
Publisher:
Springer Science and Business Media LLCCopyright Statement
Country of Publication:
United States
Language:
English

References (1)

Novel Ferroelectricity in II-VI Semiconductor ZnO journal January 2002

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