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Low-temperature formation of Ti2AlN during post-deposition annealing of reactive multilayer systems

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/5.0230405· OSTI ID:2998310
Mn+1AXn-phase Ti2AlN thin-films were synthesized using reactive sputtering-based methods involving the deposition of single-layer TiAlN, and Ti/AlN and TiN/TiAl multilayers of various modulation periods at ambient temperature and subsequent annealing at elevated temperatures. Ex situ and in situ x-ray diffraction measurements were used to characterize the Ti2AlN formation temperature and phase fraction. During annealing, Ti/AlN multilayers yielded Ti2AlN at a significantly lower in situ temperature of 650 °C compared to TiN/TiAl multilayers or single-layer TiAlN (750 °C). The results suggest a reactive multilayer mechanism whereby distinct Ti and AlN layers react readily to release exothermic energy resulting in lower phase transition temperatures compared to TiN and TiAl layers or mixed TiAlN. With a modulation period of 5 nm, however, Ti/AlN multilayers yielded Ti2AlN at a higher temperature of 750 °C, indicating a disruption of the reactive multilayer mechanism due to a higher fraction of low-enthalpy interfacial TiAlN within the film.
Research Organization:
Georgia Institute of Technology
Sponsoring Organization:
National Science Foundation (NSF); U.S. Department of Energy, Office of Science, Fusion Energy Sciences Program Office’s Fusion Materials Research Program; U.S. Department of Energy (DOE) Office of Environmental Management (EM)
DOE Contract Number:
89303321CEM000080
OSTI ID:
2998310
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 136; ISSN 0021-8979
Publisher:
AIP Publishing
Country of Publication:
United States
Language:
English

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