Formation of (Ti,Al)N/Ti{sub 2}AlN multilayers after annealing of TiN/TiAl(N) multilayers deposited by ion beam sputtering

Journal Article · Tue Apr 15 04:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2894589· OSTI ID:21137158

Dolique, V; Jaouen, M; Cabioc'h, T; Pailloux, F; Guerin, Ph ^[1]; Pelosin, V ^[2]

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1. Laboratoire de Metallurgie Physique, UMR 6630 du CNRS, Universite de Poitiers SP2MI, Bd Marie et Pierre Curie, Teleport 2, BP 30179, 86962 Futuroscope-Chasseneuil Cedex (France)
2. Laboratoire de Mecanique et de Physique des Materiaux, UMR 6617 du CNRS, ENSMA, 1 Avenue Clement Ader, Teleport 2, BP 40109, 86961 Futuroscope Chasseneuil Cedex (France)

By using ion beam sputtering, TiN/TiAl(N) multilayers of various modulation wavelengths ({lambda}=8, 13, and 32 nm) were deposited onto silicon substrates at room temperature. After annealing at 600 deg. C in vacuum, one obtains for {lambda}=13 nm a (Ti,Al)N/Ti{sub 2}AlN multilayer as it is evidenced from x-ray diffraction, high resolution transmission electron microscopy, and energy filtered electron imaging experiments. X-ray photoelectron spectroscopy (XPS) experiments show that the as-deposited TiAl sublayers contain a noticeable amount of nitrogen atoms which mean concentration varies with the period {lambda}. They also evidenced the diffusion of aluminum into TiN sublayers after annealing. Deduced from these observations, we propose a model to explain why this solid-state phase transformation depends on the period {lambda} of the multilayer.

• OSTI ID: 21137158
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM COMPOUNDS
ANNEALING
DEPOSITION
ION BEAMS
LAYERS
NITROGEN
PHASE TRANSFORMATIONS
SILICON
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TITANIUM NITRIDES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY