Ti{sub 2}AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

Journal Article · Mon Aug 15 04:00:00 EDT 2016 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2016.03.031· OSTI ID:22581585

Cabioch, Thierry ^[1]; Alkazaz, Malaz; Beaufort, Marie-France; Nicolai, Julien; Eyidi, Dominique ^[1]; Eklund, Per ^[1]

---

1. Institut Pprime, UPR 3346, Université de Poitiers, SP2MI-Boulevard 3, Téléport 2-BP 30179, 86962 Futuroscope Chasseneuil Cedex (France)

Highlights: • Epitaxial thin films of the MAX phase Ti{sub 2}AlN are obtained by thermal annealing. • A new metastable (Ti,Al,N) solid solution with the structure of α-T is evidenced. • The formation of the MAX phase occurs at low temperature (600 °C). - Abstract: Single-phase Ti{sub 2}AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AlN multilayers deposited at room temperature by magnetron sputtering onto single-crystalline (0001) 4H-SiC and (0001) Al{sub 2}O{sub 3} substrates. In-situ X-ray diffraction experiments combined with ex-situ cross-sectional transmission electron microscopy observations reveal that interdiffusion processes occur in the multilayer at a temperature of ∼400 °C leading to the formation of a (Ti, Al, N) solid solution, having the hexagonal structure of α-Ti, whereas the formation of Ti{sub 2}AlN occurs at 550–600 °C. Highly oriented (0002) Ti{sub 2}AlN thin films can be obtained after an annealing at 750 °C.

• OSTI ID: 22581585
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 80; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ALUMINIUM OXIDES
ANNEALING
EPITAXY
HEXAGONAL LATTICES
LAYERS
MONOCRYSTALS
SILICON
SILICON CARBIDES
SOLID SOLUTIONS
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
TITANIUM COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION