Phase stability of epitaxially grown Ti{sub 2}AlN thin films

Journal Article · Mon Aug 14 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2335681· OSTI ID:20883170

Beckers, M; Schell, N; Martins, R M. S.; Muecklich, A; Moeller, W ^[1]

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1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)

The phase stability of M{sub n+1}AX{sub n} phase (M: early transition metal, A: A-group element, and X: C and/or N) Ti{sub 2}AlN thin films reactively sputtered onto MgO(111) and Al{sub 2}O{sub 3}(0001) substrates has been investigated by in situ x-ray diffraction and Rutherford backscattering. High substrate temperature deposition results in epitaxial Ti{sub 2}AlN growth with basal planes parallel to the substrate surface. In contrast to reported high thermal stability for bulk Ti-Al-N M{sub n+1}AX{sub n} phases in air, Ti{sub 2}AlN thin films in vacuum decompose already at {approx}800 deg. C. The decomposition proceeds by outward Al diffusion and evaporation, followed by detwinning of the as-formed Ti{sub 2}N atomic layers into cubic TiN{sub x} and intermediate phases.

• OSTI ID: 20883170
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ALUMINIUM OXIDES
CRYSTAL GROWTH
DEPOSITION
DIFFUSION
EVAPORATION
LAYERS
MAGNESIUM OXIDES
PHASE STABILITY
PYROLYSIS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TITANIUM NITRIDES
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION