Refractive index and absorption of GaAs quantum wells across excitonic resonances
- Department of Physics, University of California at Berkeley, Berkeley, California, 94720 (United States)
We present simultaneous measurement of the refractive index and absorption coefficient in a AlGaAs/GaAs multiple quantum well structure near the band gap by Fourier transform spectral interferometry. Both quantities were measured across heavy- and light-hole excitons for temperatures ranging from liquid helium to room temperature. The experimental results are analyzed using an analytical expression for the complex dielectric function of Wannier excitons in fractional dimension. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 298600
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 73; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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