InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

Journal Article · Sun Jan 31 23:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123105· OSTI ID:295499

Kurtz, S R; Allerman, A A; Jones, E D; Gee, J M; Banas, J J; Hammons, B E ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)

The design, growth by metalorganic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar cell, with 1.0 eV band gap, lattice matched to GaAs is described. The hole diffusion length in annealed, {ital n}-type InGaAsN is 0.6{endash}0.8 {mu}m, and solar cell internal quantum efficiencies {gt}70{percent} are obtained. Optical studies indicate that defects or impurities, from InGaAsN doping and nitrogen incorporation, limit solar cell performance. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 295499
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 74; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CARRIER LIFETIME
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
DIFFUSION LENGTH
ENERGY GAP
GALLIUM ARSENIDE SOLAR CELLS
IMPURITIES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED SPECTRA
NITROGEN ADDITIONS
PERFORMANCE
PHOTOLUMINESCENCE
QUANTUM EFFICIENCY
SOLAR CELLS