InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs

Journal Article · Mon Nov 23 23:00:00 EST 1998 · Applied Physics Letters

OSTI ID:2000

Allerman, A A ^[1]; Banas, J J; Gee, J M; Hammons, B E; Jones, E D; Kurtz, S R

---

1. Sandia National Laboratories

The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

• Research Organization: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 2000
• Report Number(s): SAND98-2631J; ON: DE00002000
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
Arsenic Compounds
Chemical Vapor Deposition
Fabrication
Gallium Compounds
Indium Compounds
Nitrogen Compounds