In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon
- Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Sandia National Labs., Albuquerque, NM (United States)
Mass spectrometry of the plasma effluent during Reactive Ion Beam Etching (RIBE) of GaAs using an Inductively Coupled Plasma (ICP) source and a Cl{sub 2}/Ar gas chemistry shows that AsCl{sub 3}, AsCl{sub 2} and AsCl are all detected as etch products for As, while GaCl{sub 2} is the main signal detected for the Ga products. The variation in selective ion currents for the various etch products has been examined as a function of chuck temperature (30--100 C), percentage Cl{sub 2} in the gas flow, beam current (60--180 mA) and beam voltage (200--800 V). The results are consistent with AsCl{sub 3} and GaCl{sub 3} being the main etch product species under their conditions, with fragmentation being responsible for the observed mass spectra.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Management and Administration, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 292864
- Report Number(s):
- SAND--98-0223C; CONF-971201--; ON: DE98002588
- Country of Publication:
- United States
- Language:
- English
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